| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
| 摘要 |
A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position. |
| 申请公布号 |
US2016064219(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514838793 |
申请日期 |
2015.08.28 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
YAMAMOTO Ryuji;KAMAKURA Tsukasa;HIROSE Yoshiro;SHIMAMOTO Satoshi |
| 分类号 |
H01L21/02;C23C16/455;C23C16/52;C23C16/46;C23C16/458 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
loading a substrate into a process chamber; supporting the substrate by a mounting table having a heater therein in the process chamber; forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on; unloading the substrate on which the film is formed from the process chamber; and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on, the second position being closer to a ceiling portion in the process chamber than the first position. |
| 地址 |
Tokyo JP |
