SEMICONDUCTOR FABRICATING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

The disclosure provides a semiconductor fabricating apparatus and a method of fabricating a semiconductor device using the same. In some embodiments, the apparatus may synchronize low-frequency, high-frequency and direct current (DC) powers that are applied to an electrode. The low-frequency power may have a non-sinusoidal waveform. Thus, reliability and reproducibility of a semiconductor fabrication process may be improved. In other embodiments, the apparatus may include a first low-frequency power generator generating a first low-frequency power having a sinusoidal waveform and a second low-frequency power generator generating a second low-frequency power having a non-sinusoidal waveform.

主权项

1. A semiconductor fabricating apparatus comprising:
a process chamber having an inner enclosed region in which a semiconductor process is performed; a lower electrode disposed in the process chamber and having a top surface configured to load a substrate; an upper electrode disposed over the lower electrode in the process chamber; a low-frequency power generator connected to the lower electrode and configured to generate a low-frequency power having a non-sinusoidal waveform at a first frequency; a high-frequency power generator configured to generate a high-frequency power having a second frequency higher than the first frequency of the low-frequency power; a direct current (DC) power generator configured to generate a DC power comprised of a first period having a first level duration and a second level duration; and a controller configured to provide a first control signal to the DC power generator, a second control signal to the low-frequency power generator, and a third control signal to the high-frequency power generator, the first control signal being applied to control the DC power generator to apply a first DC voltage to the upper electrode during the first level duration and to apply a second DC voltage different from the first DC voltage to the upper electrode during the second level duration, the second control signal being applied to control the low-frequency power generator to apply the low frequency power during the first level duration but not during the second level duration, and the third control signal being applied to control the high-frequency generator to apply the high frequency power during the first level duration but not during the second level duration.