PATTERN FORMING METHOD

摘要

A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.

主权项

1. A pattern forming method comprising:
forming a first pattern of a first material on a first film; forming a block copolymer layer including a first block polymer chain and a second block polymer chain, on the first pattern; forming a second pattern by microphase-separating the block copolymer layer, and removing one of the separated first block polymer chain or the second block polymer chain; forming a second film that covers the second pattern by applying a second material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern; selectively removing the second film until the second pattern is exposed; forming a third pattern by selectively removing portions of the first pattern exposed in openings of the third pattern using the second pattern of the second film as a mask, the third pattern including a first portion that includes a portion of the first pattern and the second film on the first pattern and partially, and a second portion that includes the second film which is formed directly on the first film, wherein the second portion has a film thickness that is greater than a thickness of the second film of the first portion by a thickness of the first pattern; and processing the first film using the third pattern as a mask.