发明名称 |
SEQUENTIAL ETCHING TREATMENT FOR SOLAR CELL FABRICATION |
摘要 |
A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant. |
申请公布号 |
WO2016032856(A2) |
申请公布日期 |
2016.03.03 |
申请号 |
WO2015US46175 |
申请日期 |
2015.08.20 |
申请人 |
SUNPOWER CORPORATION;TOTAL MARKETING SERVICES |
发明人 |
HARRINGTON, SCOTT;BALU, VENKATASUBRAMANI;MONTESDEOCA SANTANA, AMADA LORENA |
分类号 |
H01L31/18;H01L31/02;H01L31/0392 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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