| 摘要 |
Provided is a Cu-Ga sputtering target having a composition containing, as a non-fluorine metal component thereof, 5-60 at% Ga and 0.01-5 at% K, with the remainder being Cu and unavoidable impurities. The Cu-Ga sputtering target has a Cu-Ga-K-F area containing Cu, Ga, K, and F, in an atom mapping image obtained by wavelength-dispersive X-ray spectroscopy. |
