METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR

摘要

A low-temperature poly-silicon thin film transistor and a manufacturing method therefor. The method comprises: carrying out an etching operation on a gate metal layer by using a photoresist pattern (105) to form a gate intermediate pattern (106), the size of the gate intermediate pattern (106) being greater than the size of a gate target pattern (101); carrying out shielding by using the photoresist pattern (105), and forming an n+ region (1041) in a poly-silicon layer (104); removing a redundant part, relative to the gate target pattern (101), of the gate intermediate pattern (106) by using a dry etching technology, so as to obtain the gate target pattern (101); and carrying out shielding by using the gate target pattern (101), and forming an n- region (1042) in the poly-silicon layer. The precision of the n- region of the manufactured thin film transistor can meet requirements for accurate control of the low-temperature poly-silicon thin film transistor over the size of an LDD structure, and the manufacturing technological process of the LTPS TFF is simplified.