THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

主权项

1. A thin film transistor (“TFT”) comprising:
a gate electrode; a semiconductor layer overlapping with the gate electrode; a first insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode overlapping with the semiconductor layer; a drain electrode overlapping with the semiconductor layer and vertically spaced apart from the source electrode; a second insulating layer disposed between the source electrode and the drain electrode; and a first graphene pattern disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.