| 发明名称 |
Semiconductor Device and a Method for Manufacturing a Semiconductor Device |
| 摘要 |
A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region. Further it comprises a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the substrate structure and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure. |
| 申请公布号 |
US2016064477(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514837223 |
申请日期 |
2015.08.27 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Blank Oliver;Hirler Franz;Siemieniec Ralf;Yip Li Juin |
| 分类号 |
H01L29/06;H01L29/40 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region; a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the semiconductor substrate structure; and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure. |
| 地址 |
Villach AT |
