| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes: a substrate doped with a first conductive type;
a first nanowire protruding on the substrate in a first direction and including a first core and a first shell; and an electrode being on the first nanowire and directly contacting a top surface of the first core, wherein the first shell covers a sidewall of the first core;the first shell includes a first semiconductor; and the first core includes a second semiconductor having a different bandgap than the first semiconductor. |
| 申请公布号 |
US2016064474(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514634132 |
申请日期 |
2015.02.27 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
SUH Dongwoo |
| 分类号 |
H01L29/06;H01L31/0352;H01L21/3105;H01L31/109;H01L31/18;H01L21/02;H01L29/165;H01L31/028 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate doped with a first conductive type; a first nanowire protruding on the substrate in a first direction and including a first core and a first shell; and an electrode being on the first nanowire and directly contacting a top surface of the first core, wherein the first shell covers a sidewall of the first core; the first shell includes a first semiconductor; and the first core includes a second semiconductor having a different bandgap than the first semiconductor. |
| 地址 |
Daejeon KR |
