| 发明名称 |
METHOD AND APPARATUS FOR THINNING WAFER |
| 摘要 |
A method and an apparatus for thinning a wafer are provided. The method for thinning a wafer, according to one embodiment of the present invention, comprises the steps of: irradiating a line beam focused at a specific depth of the wafer; scanning the wafer by using the line beam so as to form an interface at the specific depth of the wafer; and cleaving the wafer on which the interface is formed into a pattern wafer and a dummy wafer. |
| 申请公布号 |
US2016064229(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414785372 |
申请日期 |
2014.04.02 |
| 申请人 |
HANWHA TECHWIN CO., LTD. |
发明人 |
KIM Sung Wook |
| 分类号 |
H01L21/304;B23K26/402;B28D5/00;B23K26/00 |
主分类号 |
H01L21/304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for thinning a wafer, comprising:
irradiating a line beam focused at a specific depth of a wafer; scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; and cleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer. |
| 地址 |
Gyeongsangnam-do KR |
