| 摘要 |
PURPOSE:To cut a wiring part of less than 1mu by a method wherein ion beams from a high-brightness ion source such as a liquid-metal ion source or the like are converged a!ld the wiring part of an IC chip is irradiated with the beams. CONSTITUTION:Ion beams are extracted from a high-brightness ion source 65 such as a liquid-metal ion source or the like, the ion beam are converged to a minute spot by means of a charged-particle optical system; a minute wiring part of a device 90 is irradiated with the beams so as to remove this part. During this process, a spot diameter ranging from 0.3 to 0.1mu or less than this range can be obtained; because this process is a sputtering process where ions collide with target atoms and are scattered, this process hardly influences the circumference due to the thermal diffusion; it is possible to process the size of less than 0.3mu. By this method, it is possible to process a wiring part of less than 1mu easily and with high accuracy. |
