| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change memory element of metal-insulator (resistance change layer)-metal (MIM) structure in which the operation (formation of a filament) of forming or electron injection into a deficit is not required when forming a resistance change element using a high stability/high reliability/high durability oxygen or metal-deficient metal oxide layer of low element drive voltage and low power consumption in the resistance change layer. <P>SOLUTION: A high stability/high reliability/high durability resistance change element of low element drive voltage and low power consumption is obtained by adding a metal or a semiconductor and nitrogen to a resistance change layer, thereby forming a part of a conduction path previously (pre-filament), and lowering the voltage to a level equal to the ON voltage without going through a conventional filament formation process by high voltage forming. <P>COPYRIGHT: (C)2013,JPO&INPIT |
