| 摘要 |
The invention is intended to make it possible to determine the ageing status of a specific power semiconductor more reliably. For this purpose, a temperature-voltage characteristic curve of the semiconductor component (IGBT 1) is determined (S1) and a reference resistance value of the thermal resistance of the semiconductor component is determined (S2) before initial operation of the semiconductor component. After initial operation, a temperature increase of the semiconductor component upon heating is determined (S3, S4) in order to determine (S5) a current thermal resistance value. Subsequently a difference between the current thermal resistance value and the reference resistance value is determined (S6) and information regarding the ageing status is output (S7) on the basis thereof. |
