发明名称 NANOWIRE GROWING METHOD ON BOTH SIDES OF GRAPHINE AND STRUCTURE THEREBY
摘要 The present invention provides a structure consisting of a nanostructure-graphene-nanostructure by growing a nanostructure on both sides of graphene using a hydrothermal solution method which immerses a substrate having the graphene into a precursor solution capable of growing the nanostructure after the produced graphene is placed on the substrate. The graphene structure according to the present invention can greatly improve device efficiency with excellent properties of the graphene, because a contact area is greatly enhanced by growing nanostructure grafted with graphene having high conductivity, high heat conductivity and high transparency, on both sides of the graphene.
申请公布号 KR101599153(B1) 申请公布日期 2016.03.02
申请号 KR20140152435 申请日期 2014.11.04
申请人 PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION 发明人 HWANG, YOON HWAE;KIM, HYUNG KOOK;HONG, SUCK WON;SHIN, DONG MYEONG;KANG, SEOK HEE
分类号 B82B3/00;C01B31/04 主分类号 B82B3/00
代理机构 代理人
主权项
地址