发明名称 |
ACCELERATED PARTICLE AND HIGH ENERGY RADIATION SENSOR |
摘要 |
An accelerated electron detector comprises an array of monolithic sensors in a CMOS structure, each sensor comprising a substrate (10), an epi layer (11), a p+ well (12) and n+ wells (13) which are separated from the p+ well (12) by the epi layer (11). Integrated in the p+ well are a plurality of NMOS transistors. The sensor also includes a deep n region (15) beneath the p+ well (12) which establishes within the epi layer a depletion layer so that on application of a biasing voltage charge carriers generated in the epi layer are caused to drift to the n+ well (13). The detector has improved radiation hardness and it therefore suitable for the detection and imaging of accelerated electrons such as in electron microscopes. |
申请公布号 |
EP1620895(B1) |
申请公布日期 |
2016.03.02 |
申请号 |
EP20040731669 |
申请日期 |
2004.05.07 |
申请人 |
THE SCIENCE AND TECHNOLOGY FACILITIES COUNCIL |
发明人 |
TURCHETTA, RENATO, ANDREA, DANILO;VILLANI, GIULIO, ENRICO;PRYDDERCH, MARK, LYNDON |
分类号 |
H01L27/146;G01J1/00;G01T1/24 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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