| 摘要 |
A magnetic random access memory (MRAM) cell (1) comprising: a magnetic tunnel junction (2) comprising a tunnel barrier layer (22) between a first magnetic layer (21) having a first magnetization direction, and a second magnetic layer (23) having a second magnetization direction being adjustable from a first direction to a second direction relative to the first magnetization direction, such as to vary a junction resistance (R MTJ ) of the magnetic tunnel junction (2) from a first to a second junction resistance level; wherein said magnetic tunnel junction (2) further comprises a switching resistant element (62, 22) electrically connected to the magnetic tunnel junction (2) and having a switching resistance (R s ) that can be switched from a first to a second switching resistance level when a switching current (31) is passed through the switching resistant element (62, 22), such that a MRAM cell resistance (R c ) of the MRAM cell (1) can have at least four different cell resistance levels depending of the resistance level of the junction resistance (R MTJ ) and the switching resistance (R s ). The MRAM cell disclosed herein achieves improved read margin compared to conventional MRAM cells and allows for writing at least four different cell resistance levels. |
