| 摘要 |
A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1−3)Ga(1−b)Zn(1+a+b)O4, wherein 0≦̸a≦̸0.1, 0≦̸b≦̸0.1, and 0<a+b≦̸0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm−3 and 5×1018 cm−3. |
