| 摘要 |
An object of the present invention is to provide a trench gate type IGBT achieving both retention of withstand voltage and lowering of ON-state voltage and to provide a method for manufacturing the trench gate type IGBT. The IGBT according to the present invention is an SJ-RC-IGBT which includes a drift layer having super junction structure, and includes an IGBT area and an FWD area on the rear surface. In the IGBT according to the present invention, a first drift layer has an impurity concentration of 1×1015 atms/cm3 or higher and lower than 2×1016 atms/cm3, and a thickness of 10 μm or larger and smaller than 50 μm; and that a buffer layer has an impurity concentration of 1×1015 atms/cm3 or higher and lower than 2×1016 atms/cm3, and a thickness of 2 μm or larger and smaller than 15 μm. |
