Spin transfer torque magnetic memory device

摘要

A spin transfer torque magnetic memory device is disclosed comprising a first layered structure and a second layered structure, the layered structures comprising alternating layers of topological insulator layers and insulator layers and a magnetic material, for having a direction of magnetization representing a value of the device, sandwiched in between the first layered structure and the second layered structure, such that each topological insulator layer of the first and the second layered structure is in direct contact with the magnet material.