| 摘要 |
A semiconductor device having a u-shaped fin-like field effect transistor (FinFET) and methods for forming the same are disclosed. The semiconductor device includes a substrate and a fin over the substrate, wherein the fin has a u-shape from a top view with first and second arm portions and a bridge portion connecting the first and second arm portions. The semiconductor device further includes a first gate over the substrate, engaging the fin at both the first and second arm portions and the bridge portion. A source region of the FinFET is formed in the first arm portion, a drain region of the FinFET is formed in the second arm portion, and a channel region of the FinFET is formed in the fin between the source region and the drain region. |
