摘要 |
A method for producing a semiconductor component has the following step: the front side ( 101 ) of the semiconductor body ( 100 ) is irradiated with high-energy particles using the terminal electrode ( 40 ) as a mask, in order to produce recombination centres ( 80 A, 80 B) in the semiconductor body ( 100 ) for the recombination of the first and second conduction type of charge carriers. |