发明名称 |
P-N DIODE HAVING A CONTROLLED HETEROSTRUCTURE SELF-POSITIONED ON HGCDTE, FOR INFRARED IMAGERS |
摘要 |
A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well. |
申请公布号 |
EP2786425(B1) |
申请公布日期 |
2016.03.02 |
申请号 |
EP20120790573 |
申请日期 |
2012.11.26 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
MOLLARD, LAURENT;BAIER, NICOLAS;ROTHMAN,JOHAN |
分类号 |
H01L31/103;H01L31/18 |
主分类号 |
H01L31/103 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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