JUNCTION BARRIER SCHOTTKY DIODE HAVING EPI RE-GROWTH PATTERN AND METHOD FOR PRODUCING SAME

摘要

The present invention relates to a manufacturing method of a junction barrier schottky diode with epi re-growth patterns. The manufacturing method comprises: (a) a step of forming an N-type epi layer on an N+ type substrate; (b) a step of forming multiple ohmic contact patterns for P+ junction at regular intervals inside the upper part of the first N-type epi layer by inserting P+ semiconductor foreign material ions from the upper part through mask patterns for forming P+ implants; (c) a step of growing a second N type epi-layer of a certain width on the upper part of the first N-type epi layer on which the multiple ohmic contact patterns for P+ junction are formed; (d) a step of forming epi re-growth patterns of which the trapezoid shaped protruding parts are continuously arranged by etching the second N-typed epi layer; and (e) a step of forming a Schottky metal terminal layer of a certain width along the upper surface of the epi re-growth patterns.