发明名称 有機半導体デバイスの製造方法
摘要 A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS-R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.
申请公布号 JP5875709(B2) 申请公布日期 2016.03.02
申请号 JP20140555091 申请日期 2012.02.02
申请人 ビーエーエスエフ ソシエタス・ヨーロピアBASF SE 发明人 スブラマニアン ヴァイディアナサン;マルセル カストラー;ベルタ タン;ミー ジョウ
分类号 H01L21/336;C08G61/12;H01L21/28;H01L29/786;H01L51/05;H01L51/30;H01L51/50 主分类号 H01L21/336
代理机构 代理人
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