| 摘要 |
A method for manufacturing a flash memory device includes the steps of: sequentially forming an etched film and a bottom sacrificial film on a substrate; forming a top sacrificial pattern structure comprising a top sacrificial pad part and a top sacrificial line part on the bottom sacrificial film; forming a top spacer covering a side of the top sacrificial pattern structure; forming a bottom sacrificial pattern structure comprising a bottom pad part and a bottom sacrificial line part by etching the bottom sacrificial film, using the top sacrificial pad part and the top spacer as an etching mask; forming a bottom spacer film covering the bottom sacrificial pattern structure; and forming a bottom mask pattern including at least one line mask, a bridge mask and a pad mask, by etching at least a partial area of the bottom sacrificial pattern structure and the bottom spacer film. The objective of the present invention is to provide the method for manufacturing the flash memory device, which can reduce processing costs and a processing time, and can maintain reliability. |
