METHODS OF FORMING METAL NANO STRUCTURES AND METHODS OF FORMING ELECTRODE STRUCTURES

摘要

The present invention relates to a forming method of a metal nanostructure. The forming method of a metal nanostructure comprises the steps of: disposing a precursor including one halide metal on a front end unit of a reactor; disposing a substrate on a back end unit of the reactor; supplying carrier gas, through the front end unit of the reactor, to an inner side of the reactor; heating the inner side of the reactor at the temperature range of 200 to 450°C; and transferring the precursor through the carrier gas onto a surface of the substrate. The metal nanostructure having excellent electrical properties can be formed by a low temperature vapor process.