| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a diode with insulation trenches and barrier regions, capable of improving recovery characteristics. <P>SOLUTION: The diode 10 includes: p-type anode regions 27; a plurality of insulation trenches 36 penetrating the anode regions 27; n-type barrier regions 26 positioned at a depth larger than the anode regions 27 and smaller than the insulation trenches 36; and p-type electric field relaxation regions 25 positioned at a depth larger than the barrier regions 26 and smaller than the insulation trenches 36. <P>COPYRIGHT: (C)2013,JPO&INPIT |
