发明名称 |
METHOD FOR REMOVING POLYCRYSTALLINE SILICON PROTECTING LAYER ON IGBT BACK FACE HAVING FIELD TERMINATION STRUCTURE |
摘要 |
Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control. |
申请公布号 |
EP2879168(A4) |
申请公布日期 |
2016.03.02 |
申请号 |
EP20130822946 |
申请日期 |
2013.07.25 |
申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
RUI, QIANG;ZHANG, SHUO;WANG, GENYI;DENG, XIAOSHE |
分类号 |
H01L21/331;H01L21/04;H01L21/3105 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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