发明名称 |
Lithographic method and apparatus |
摘要 |
A multiple patterning process employs a phase change material, portions of which can be converted to an amorphous state and then a remaining portion is selectively removed to provide high resolution pattern features with a feature spacing smaller than, for example, a minimum spacing available in a conventional patterning layer employing a single exposure. A lithographic apparatus for use in the process may comprise an exposure tool having a single illuminator and single patterning device that is imaged through a single exposure slit onto a scanning substrate. Alternatively, the exposure tool may have multiple illuminators and/or multiple scanning complementary patterning devices optionally used with multiple exposure slits on the scanning substrate to facilitate double patterning in a single substrate pass. |
申请公布号 |
EP2073063(B1) |
申请公布日期 |
2016.03.02 |
申请号 |
EP20080253937 |
申请日期 |
2008.12.10 |
申请人 |
ASML HOLDING N.V.;ASML NETHERLANDS BV |
发明人 |
SEWELL, HARRY;BENSCHOP, JOZEF PETRUS HENRICUS |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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