| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of improving channel mobility and carrier injection speed without reducing a threshold voltage in a silicon carbide semiconductor device. <P>SOLUTION: A position of a surface of an epitaxial layer 102 on which source regions 110 are formed is set to be lower than the interface between a gate insulating film 116 and the epitaxial layer 102. Moreover, the source regions 110 are formed so that a position of the maximum value of the impurity concentration distribution of an impurity constituting the source regions 110 is located deeper than the surface of the epitaxial layer 102 on which the source regions 110 are formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
