Structure and method for forming integral nitride light sensors on silicon substrates

摘要

A semiconductor integrated circuit has one or more integral nitride-type sensors. In one embodiment, an integral nitride-type sensor and a coplanar supplemental circuit are formed from a common silicon substrate base. In another embodiment, an integral nitride-type sensor and a supplemental circuit are integrated in a vertical orientation.

主权项

1. An apparatus, comprising:
a first semiconductor substrate comprising a nitride sensor formed on a surface thereof and comprising a plurality of through vias; and a second semiconductor substrate comprising semiconductor devices formed on a surface thereof, wherein each of the through vias connects a metal layer or contact of one of the semiconductor devices to a metal contact of the nitride sensor.