| 摘要 |
Method for synthesizing a material by chemical vapor deposition (CVD), according to which a plasma is created in a vacuum chamber in the vicinity of a substrate, and according to which a carbon-carrying substance and H2 are introduced into the chamber in order to produce in the chamber a gas comprising substances carrying reactive-carbon atoms in the form of unsaturated molecules or radicals from which the synthesis of said material will be performed, and in that the electromagnetic absorption and inelastic diffusion spectra of the solid material to be synthesized are used to take from these spectra the absorption frequencies that contribute to the reactions that lead to the formation of the solid material to be synthesized, and in that energetic rays are produced in the form of a photon beam carrying quantities of energy determined by each of the frequencies corresponding to said absorption and inelastic diffusion frequencies, said photon beam being injected into the plasma where, for energy states of the solid material, an absorption of these photons having the energy corresponding to these energy states is effected by the substances carrying said reactive-carbon atoms. |
