Method of manufacturing semiconductor device substrate with crystal structure reformation regions

摘要

A method of manufacturing a semiconductor device include preparing an initial substrate including an edge region and a central region in which circuit patterns are formed, forming a reforming region in the edge region of the initial substrate, grinding the initial substrate to form a substrate, and cutting the substrate to form a semiconductor chip including each of the circuit patterns. A crystal structure of the reforming region is different from that of the initial substrate.

主权项

1. A method of manufacturing a semiconductor device, comprising:
preparing an initial substrate including an edge region and a central region, the central region including circuit patterns and a notch; forming a reforming region in the edge region of the initial substrate; grinding the initial substrate to form a substrate; and cutting the substrate to form a semiconductor chip including each of the circuit patterns, wherein a crystal structure of the reforming region is different from a crystal structure of the initial substrate, and wherein forming the reforming region in the edge region of the initial substrate includes irradiating a laser to a portion adjacent to the notch of the initial substrate.