发明名称 |
Semiconductor device and operating method thereof |
摘要 |
The semiconductor device includes a CAM block including a plurality of vertical strings having a perpendicular configuration with respect to a semiconductor substrate, wherein each of the plurality of vertical strings is electrically coupled to a plurality of word lines and each of the plurality of word lines is electrically coupled to a plurality of CAM cells, a peripheral circuit configured to program CAM cells selected from the plurality of CAM cells, and a control circuit configured to issue at least one command to the peripheral circuit to simultaneously apply a program voltage to an nth word line, an n−1th word line and an n+1th word line to simultaneously program CAM cells electrically coupled to the n−1th word line, the nth word line and the n+1th word line, wherein the n−1th word line and an n+1th word line are adjacent to the nth word line and the selected CAM cells are electrically coupled to the nth word line. |
申请公布号 |
US9275736(B2) |
申请公布日期 |
2016.03.01 |
申请号 |
US201414331444 |
申请日期 |
2014.07.15 |
申请人 |
SK Hynix Inc. |
发明人 |
Mun Kyung Sik;Lee Hee Youl;Kim Se Jun |
分类号 |
G11C15/00;G11C15/04;G11C5/02;G11C16/04;G11C16/10;H01L27/115 |
主分类号 |
G11C15/00 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A semiconductor device, comprising:
a CAM block including a plurality of vertical strings having a perpendicular configuration with respect to a semiconductor substrate, wherein each of the plurality of vertical strings is electrically coupled to a plurality of word lines and each of the plurality of word lines is electrically coupled to a plurality of CAM cells; a peripheral circuit configured to program CAM cells selected from the plurality of CAM cells; and a control circuit configured to control the peripheral circuit to simultaneously apply a program voltage to an nth word line, an n−1th word line and an n+1th word line to simultaneously program the CAM cells electrically coupled to the n−1th word line, the nth word line and the n+1th word line, wherein the n−1th word line and the n+1th are adjacent to the nth word line and the selected CAM cells are electrically coupled to the nth word line. |
地址 |
Gyeonggi-do KR |