发明名称 Semiconductor device and operating method thereof
摘要 The semiconductor device includes a CAM block including a plurality of vertical strings having a perpendicular configuration with respect to a semiconductor substrate, wherein each of the plurality of vertical strings is electrically coupled to a plurality of word lines and each of the plurality of word lines is electrically coupled to a plurality of CAM cells, a peripheral circuit configured to program CAM cells selected from the plurality of CAM cells, and a control circuit configured to issue at least one command to the peripheral circuit to simultaneously apply a program voltage to an nth word line, an n−1th word line and an n+1th word line to simultaneously program CAM cells electrically coupled to the n−1th word line, the nth word line and the n+1th word line, wherein the n−1th word line and an n+1th word line are adjacent to the nth word line and the selected CAM cells are electrically coupled to the nth word line.
申请公布号 US9275736(B2) 申请公布日期 2016.03.01
申请号 US201414331444 申请日期 2014.07.15
申请人 SK Hynix Inc. 发明人 Mun Kyung Sik;Lee Hee Youl;Kim Se Jun
分类号 G11C15/00;G11C15/04;G11C5/02;G11C16/04;G11C16/10;H01L27/115 主分类号 G11C15/00
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A semiconductor device, comprising: a CAM block including a plurality of vertical strings having a perpendicular configuration with respect to a semiconductor substrate, wherein each of the plurality of vertical strings is electrically coupled to a plurality of word lines and each of the plurality of word lines is electrically coupled to a plurality of CAM cells; a peripheral circuit configured to program CAM cells selected from the plurality of CAM cells; and a control circuit configured to control the peripheral circuit to simultaneously apply a program voltage to an nth word line, an n−1th word line and an n+1th word line to simultaneously program the CAM cells electrically coupled to the n−1th word line, the nth word line and the n+1th word line, wherein the n−1th word line and the n+1th are adjacent to the nth word line and the selected CAM cells are electrically coupled to the nth word line.
地址 Gyeonggi-do KR