| 发明名称 | Transistor and method for forming the same | ||
| 摘要 | A method for forming a transistor is provided. The method includes: forming a channel layer over a substrate; patterning the channel layer to form a recess; and forming a source layer in the recess, such that at least a portion of the channel layer protrudes to form the fin-type channel. | ||
| 申请公布号 | US9276084(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US201314055976 | 申请日期 | 2013.10.17 |
| 申请人 | Taiwan Semiconductor Manufacturing Company Limited | 发明人 | Wang Chien-Hsun;Huang Mao-Lin;Lin Chun-Hsiung |
| 分类号 | H01L29/66;H01L29/78 | 主分类号 | H01L29/66 |
| 代理机构 | Jones Day | 代理人 | Jones Day |
| 主权项 | 1. A transistor, comprising: a channel layer over a substrate, having a recess; a source layer comprising highly doped III-V compounds in the recess; and a barrier layer between the channel layer and the substrate, wherein the recess extends from the channel layer into the barrier layer, wherein a depth between a bottom surface of the channel layer and a base of the recess is more than about 1.4 times a width of a section of the recess intersecting the bottom surface of the channel layer, wherein a defect starting from the base of the recess does not extend above the bottom surface of the channel layer if the defect exists in the source. | ||
| 地址 | Hsinchu TW | ||