Method and system for design of a reticle to be manufactured using variable shaped beam lithography

摘要

A method for optical proximity correction (OPC) is disclosed, in which a set of VSB shots is determined, where the set of shots can approximately form a target reticle pattern that is an OPC-compensated version of an input pattern. The set of shots is simulated to create a simulated reticle pattern. A substrate image is calculated, based on using the simulated reticle pattern in an optical lithographic process to form the substrate image. A system for OPC is also disclosed.

主权项

1. A method for optical proximity correction (OPC) or mask data processing (MDP) comprising:
inputting an input pattern; determining a plurality of charged particle beam shots that can approximately form a target pattern on a reticle, wherein the target pattern is an OPC-compensated version of the input pattern; simulating a reticle pattern that will be produced on the reticle from the plurality of charged particle beam shots; and calculating a substrate image which will be formed on a substrate using an optical lithographic process with the simulated reticle pattern, wherein the simulating and the calculating are performed on a computing hardware device.