| 发明名称 | Memristor with channel region in thermal equilibrium with containing region | ||
| 摘要 | A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region. | ||
| 申请公布号 | US9276204(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US201214371492 | 申请日期 | 2012.02.29 |
| 申请人 | Hewlett Packard Enterprise Development LP | 发明人 | Miao Feng;Yang Jianhua;Strachan John Paul;Yi Wei;Ribeiro Gilberto Medeiros;Williams R. Stanley |
| 分类号 | H01L45/00;H01L27/24 | 主分类号 | H01L45/00 |
| 代理机构 | Hewlett Packard Enterprise Patent Department | 代理人 | Hewlett Packard Enterprise Patent Department |
| 主权项 | 1. A memristor with a channel region in thermal equilibrium with a containing region, the memristor comprising: a channel region having a variable concentration of mobile ions; and a containing region of stoichiometric crystalline material, containing and in thermal equilibrium with the channel region, wherein the channel region comprises a hollow core and a gradient region of the variable concentration of mobile ions entirely surrounding the hollow core, and wherein the gradient region comprises a bistable metal-oxide solid solution and an amorphous oxide phase material. | ||
| 地址 | Houston TX US | ||