Optoelectronic device and method for manufacturing the same

摘要

A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile.

主权项

1. An optoelectronic device comprising:
a first substrate; an epitaxial stack formed on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer wherein the upper surface of the second conductive-type semiconductor layer comprising a flat region and a first texture region comprising a first texture profile; a first electrode formed directly on the flat region; and a first passivation layer formed on the upper surface of the second conductive-type semiconductor layer, wherein the upper surface of the first passivation layer comprises a second texture profile not corresponding to, random and different from the first texture profile, and wherein an average depth of the second texture profile is larger than an average depth of the first texture profile.