Array substrate including oxide thin film transistor and method of fabricating the same

摘要

An array substrate including: a gate barrier layer on a substrate; a gate line on the gate barrier layer, the gate line having a gate open portion exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and source and drain electrodes spaced apart from each other on the active layer.

主权项

1. An array substrate comprising:
a gate barrier layer on a substrate; a gate line on the gate barrier layer, at least part of the gate line being discontinuous exposing the gate barrier layer in a gate electrode region; a gate insulating layer on the gate line; an active layer on the gate insulating layer over the gate barrier layer in the gate electrode region; and a source electrode and a drain electrode spaced apart from each other on the active layer, wherein the discontinuous part of the gate line is positioned under a region in the active layer between the source electrode and the drain electrode.