| 发明名称 | Semiconductor device and method for fabricating the same | ||
| 摘要 | A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film. | ||
| 申请公布号 | US9275993(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US201313960977 | 申请日期 | 2013.08.07 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Weon-Hong;Song Moon-Kyun;Won Seok-Jun |
| 分类号 | H01L27/088;H01L21/28;H01L27/092;H01L29/49;H01L29/51;H01L29/78;H01L21/8238 | 主分类号 | H01L27/088 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A semiconductor device comprising: a first interface film on a first area of a substrate, the first interface film including, a first growth interface film, anda second growth interface film on a lower portion of the first growth interface film; a first dielectric film on the first interface film; a first gate electrode on the first dielectric film; and a second interface film on a second area of the substrate, the first growth interface film having a first thickness and the second interface film having a second thickness greater than the first thickness, and the second interface film being in the form of a single layer. | ||
| 地址 | Gyeonggi-do KR | ||