发明名称 Method of detaching a layer
摘要 The present disclosure concerns a method of detaching a layer to be detached from a donor substrate, comprising the following steps: a) assembling the donor substrate and a porous substrate, b) application of a treatment of chemical modification of the crystallites, the chemical modification being adapted to generate a variation of the volume of the crystallites, the volume variation generates deformation in compression or in tension of the porous substrate, the deformation in compression or in tension generates a stress in tension or in compression in the donor substrate, which causes fracture in a fracture plane, the fracture plane delimiting the layer to be detached, the stress leading to the detachment of the layer to be detached from the donor substrate.
申请公布号 US9275893(B2) 申请公布日期 2016.03.01
申请号 US201314426509 申请日期 2013.04.10
申请人 Soitec 发明人 Barthelemy Alexandre
分类号 H01L21/762 主分类号 H01L21/762
代理机构 TraskBritt 代理人 TraskBritt
主权项 1. A method of detaching a layer to be detached from a donor substrate, the method comprising: assembling the donor substrate and a porous substrate including the layer to be detached such that the porous substrate and the layer to be detached contact one another at an interface, the porous substrate including pores and crystallites; and after assembling the donor substrate and the porous substrate, applying a treatment to the assembly so as to chemically modify at least some surfaces of the crystallites of the porous substrate, the chemical modification generating a variation of a volume of the crystallites, the volume variation generating deformation in compression or in tension of the porous substrate essentially parallel to the interface, the deformation in compression or in tension of the porous substrate generating a stress in tension or in compression in the donor substrate, the stress in tension or in compression being greater than a mechanical strength of the donor substrate in a fracture plane essentially parallel to the interface and delimiting the layer to be detached, the stress leading to the detachment of the layer to be detached from the donor substrate along the fracture plane.
地址 Bernin FR