Method for cleaning wafers using a polycarboxylate solution

摘要

A cleaning solution and method for removing submicron particles from the surface of an electronic substrate such as a semiconductor wafer. The cleaning solution comprises a polycarboxylate polymer, a base and water. The method comprises the step of contacting a surface of the substrate with a cleaning solution comprised of the polycarboxylate polymer. Additional optional steps in the method include applying acoustic energy to the cleaning solution and/or rinsing the surface with a rinsing solution with or without the application of acoustic energy to the rinsing solution.

主权项

1. A method for removing particles from the surface of a semiconductor wafer comprising:
positioning a semiconductor wafer having at least one electronic feature formed on a surface of the semiconductor wafer above a nozzle, with the surface facing downwards toward the nozzle and the surface having a plurality of particles smaller than one micron adhered to it; and dispensing a cleaning solution from the nozzle so that the cleaning solution contacts the surface, with at least some of the cleaning solution falling away from the surface after contacting the surface, with the cleaning solution being comprised of a polycarboxylate polymer, water and a base chosen from the group consisting of ammonium hydroxide, TMAH and choline, and the cleaning solution having a pH of 8 or higher and not including hydrogen peroxide, so that at least some of the particles smaller than one micron are removed from the surface by the cleaning solution.