| 发明名称 | Materials for gas capture, methods of making materials for gas capture, and methods of capturing gas | ||
| 摘要 | In accordance with the purpose(s) of the present disclosure, as embodied and broadly described herein, embodiments of the present disclosure, in one aspect, relate to materials that can be used for gas (e.g., CO2) capture, methods of making materials, methods of capturing gas (e.g., CO2), and the like. | ||
| 申请公布号 | US9272262(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US201213709155 | 申请日期 | 2012.12.10 |
| 申请人 | King Abdullah University of Science and Technology (KAUST) | 发明人 | Polshettiwar Vivek;Patil Umesh |
| 分类号 | B01D53/02;B01J20/30;B01J20/02;B01J20/32 | 主分类号 | B01D53/02 |
| 代理机构 | Thomas | Horstemeyer, LLP | 代理人 | Thomas | Horstemeyer, LLP |
| 主权项 | 1. A structure comprising: a nitridated material, wherein the nitridated material has the characteristic of capturing CO2, wherein the nitridated material has a surface selected from: a nitridated silica material, a nitridated metal oxide material surface, or a nitridated non-metal oxide material, wherein the nitridated material is formed through cyclic chlorination and ammoniation of a material to densify NH2 groups on the material surface, wherein cyclic chlorination and ammoniation includes dehydroxilation of the material followed by chlorination with thionyl chloride and ammonia adsorption and subjecting the ammoniated trichlorosilylated material to another exposure to trichlorosilylation ammoniation to form a surface having a network of surface —Si(NH)2—(NH)—Si—(HN2)2 or 3. | ||
| 地址 | SA | ||