发明名称 Array substrate and method of fabricating the same, and liquid crystal display device
摘要 An array substrate, a method of fabricating the same, and a liquid crystal display device are disclosed. The method comprises: sequentially forming a first transparent conductive material layer, an insulation material layer, a semiconductor material layer and a photoresist layer on a substrate base and forming patterns including a gate line, a gate, a gate insulation layer, a semiconductor layer and a first transparent electrode by patterning process; forming a passivation layer and forming a source via and a drain via connected to the semiconductor layer in the passivation layer; sequentially forming a second transparent conductive material layer and a source-drain metal layer and forming patterns including a source, a drain and a second transparent electrode by patterning process, the gate insulation layer is formed only on the gate and the gate line, the source and the drain include stacked second transparent conductive material layer and source-drain metal layer.
申请公布号 US9276014(B2) 申请公布日期 2016.03.01
申请号 US201514852810 申请日期 2015.09.14
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 Yoo Seongyeol;Song Youngsuk;Kim Heecheol;Choi Seungjin
分类号 H01L29/66;H01L29/786;H01L27/12;G02F1/1362;G02F1/1368;G02F1/1343;H01L29/24;H01L23/522;H01L23/31 主分类号 H01L29/66
代理机构 Nath, Goldberg & Meyer 代理人 Nath, Goldberg & Meyer ;Goldberg Joshua B.
主权项 1. An array substrate, comprising a gate, a gate line, a gate insulation layer, a semiconductor layer, a first transparent electrode, a second transparent electrode, a source, a drain and a passivation layer, wherein the passivation layer covers the gate line, the gate, the gate insulation layer, the semiconductor layer and the first transparent electrode; the second transparent electrode is provided above the passivation layer; the source and the drain are provided above the passivation layer and are electrically connected to the semiconductor layer through a source via and a drain via provided in the passivation layer, respectively; the gate and the gate line comprise a first transparent conductive material layer, the first transparent conductive material layer is provided in the same layer as the first transparent electrode; the gate insulation layer is provided between the gate and the semiconductor layer and is not provided between the first transparent electrode and the second transparent electrode; and the source and the drain comprise a second transparent conductive material layer and a source-drain metal layer provided on the second transparent conductive material layer, the second transparent conductive material layer is provided in the same layer as the second transparent electrode.
地址 Beijing CN