| 发明名称 |
EM protected semiconductor die |
| 摘要 |
In one embodiment, a semiconductor die is formed to have sloped sidewalls. A conductor is formed on the sloped sidewalls. |
| 申请公布号 |
US9275957(B2) |
申请公布日期 |
2016.03.01 |
| 申请号 |
US201314061153 |
申请日期 |
2013.10.23 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
Seddon Michael J.;Carney Francis J.;Grivna Gordon M. |
| 分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L23/552;H01L21/76;H01L21/4763;H01L21/44;H01L21/302;H01L21/461;H01L21/768;H01L21/78;H01L23/60;H01L21/311;H01L23/31 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
Hightower Robert F. |
| 主权项 |
1. A semiconductor die comprising:
a semiconductor substrate having a first surface and a second surface wherein the semiconductor substrate includes a bulk silicon semiconductor substrate and a silicon semiconductor material overlying the bulk silicon semiconductor substrate; a doped region formed in at least a portion of the silicon semiconductor material; an opening extending through the semiconductor die including through the bulk silicon semiconductor substrate and through the semiconductor material overlying the bulk silicon semiconductor substrate, the opening having sidewalls wherein the sidewalls include rough sidewalls and at least one sidewall is a sloped sidewall so that a width of a first end of the opening is greater than a width of an opposite end of the opening; and a first conductor on the sloped sidewall. |
| 地址 |
Phoenix AZ US |
