Gas treatment systems

摘要

An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

主权项

1. A method of treating one or more substrates comprising:
(a) rotating a holder carrying the substrates about an axis while maintaining surfaces of the substrates substantially perpendicular to the axis and facing in an upstream direction along the axis; and, during the rotating step, (b) discharging a first gas in the downstream direction toward the substrates as a first gas stream extending across the axis in a first radial direction perpendicular to the axis and as a second gas stream extending perpendicular to the axis in a second radial direction perpendicular to the first radial direction; (c) simultaneously discharging a second gas in the downstream direction toward the substrates as third gas streams disposed around the axis between the first and second gas streams; and (d) discharging the second gas in the downstream direction toward the substrates from a center inlet disposed substantially on the axis.