发明名称 単層カーボンナノチューブの製造方法
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a single-layer carbon nanotube capable of selectively and precisely controlling chirality. <P>SOLUTION: The production method simultaneously performs a growing step to grow the single-layer carbon nanotube by a plasma CVD process on a catalyst layer of a substrate having the catalyst layer composed of a non-magnetic metal, and an etching step to etch the substrate by reactive ion etching. In the growing step, a hydrocarbon gas is used as the raw material gas of the plasma CVD process to control the plasma sheath electric field generated by the plasma CVD process. In the etching step, the chemical active species in the reactive ion etching is a hydrogen radical and the species carrying physical action is an ion, and the radical density and ion injection energy are controlled in the etching process. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5870604(B2) 申请公布日期 2016.03.01
申请号 JP20110225534 申请日期 2011.10.13
申请人 国立大学法人東北大学 发明人 畠山 力三;加藤 俊顕
分类号 C01B31/02;B01J23/745 主分类号 C01B31/02
代理机构 代理人
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