Optoelectronic semiconductor component and method for producing such an optoelectronic semiconductor component

摘要

In at least one embodiment of the optoelectronic semiconductor component (1), the optoelectronic semiconductor component has a support (2). At least one optoelectronic semiconductor chip (3) with a radiation outlet face (30) is applied onto a support upper face (20). A sacrificial layer (5) is located over the radiation outlet face (30) in the direction away from the support (2). A housing body (6) which has a housing upper face (60) is molded around the semiconductor chip (3) and/or around the sacrificial layer (5) in a lateral direction parallel to the radiation outlet face (30). A sacrificial layer (5) upper face (50) which faces away from the radiation outlet face (30) is free of a housing body (6) material.

主权项

1. An optoelectronic semiconductor component comprising
a carrier having a carrier top side, at least one optoelectronic semiconductor chip having a radiation exit side, said at least one optoelectronic semiconductor chip being fitted to the carrier top side, a sacrificial layer situated, in a direction away from the carrier, above the radiation exit side, a housing body having a housing top side, wherein the housing body is molded to the semiconductor chip and/or to the sacrificial layer all around in a lateral direction, parallel to the radiation exit side, and wherein a top side of the sacrificial layer facing away from the radiation exit side is free of a material of the housing body, and a conversion element for wavelength conversion of the radiation generated by the semiconductor chip situated between the radiation exit side and the sacrificial layer, wherein the conversion element, as seen in a plan view of the radiation exit side, is completely covered by the sacrificial layer, and wherein the sacrificial layer and the conversion element are molded from different materials, wherein the sacrificial layer comprises a filter means, and the sacrificial layer covers side surfaces of the semiconductor chip and of the conversion element, wherein the housing body is in direct contact to the sacrificial layer and has no direct contact to the semiconductor chip and to the conversion element.