| 发明名称 | Integrated circuits having dummy gate electrodes and methods of forming the same | ||
| 摘要 | An integrated circuit comprises a gate electrode of at least one active transistor. The integrated circuit also comprises a first dummy gate electrode on a first side of the gate electrode. The integrated circuit further comprises a second dummy gate electrode on a second side of the gate electrode, the second side being opposite the first side. The integrated circuit additionally comprises a diffusion ring surrounding the gate electrode, the first dummy gate electrode, and the second dummy gate electrode. The integrated circuit also comprises a diffusion area extending from a first edge of the diffusion ring to a second edge of the diffusion ring. | ||
| 申请公布号 | US9275994(B2) | 申请公布日期 | 2016.03.01 |
| 申请号 | US201414546818 | 申请日期 | 2014.11.18 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Huang Mei-Hui;Chern Chan-Hong |
| 分类号 | H01L27/088;H01L29/06;H01L21/8234;H01L27/02;H01L29/423;H01L29/66 | 主分类号 | H01L27/088 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. An integrated circuit comprising: a gate electrode of an active transistor; a first dummy gate electrode on a first side of the gate electrode; a second dummy gate electrode on a second side of the gate electrode, the second side being opposite the first side; and a diffusion ring surrounding the gate electrode, the first dummy gate electrode, and the second dummy gate electrode; and a diffusion area extending from a first edge of the diffusion ring to a second edge of the diffusion ring. | ||
| 地址 | TW | ||