Integrated circuit formed using spacer-like copper deposition

摘要

A method of forming a semiconductor device includes depositing a metal spacer over a core supported by a first extremely low-k dielectric layer having metal contacts embedded therein, etching away an upper portion of the metal spacer to expose the core between remaining lower portions of the metal spacer, removing the core from between the remaining lower portions of the metal spacer, and depositing a second extremely low-k dielectric layer over the remaining lower portions of the metal spacer.

主权项

1. A method of forming a semiconductor device, comprising:
depositing a metal spacer over a core supported by a first extremely low-k dielectric layer having metal contacts embedded therein, wherein the core comprises raised features above an underlying substrate; removing an upper portion of the metal spacer to expose the core between remaining lower portions of the metal spacer; removing the core from between the remaining lower portions of the metal spacer; and depositing a second extremely low-k dielectric layer over the remaining lower portions of the metal spacer; and performing a chemical-mechanical planarization (CMP) process to remove some of the second extremely low-k dielectric layer.